View 386M-E1_4228040.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

low voltage audio power amplifier oct. 2006 rev. 1. 3 bcd semiconductor manufacturing limited 1 data sheet az386 general description the az386 is a power amplifier designed for use in low voltage consumer applications. the gain is inter- nally set to 20 to keep external part count low, but the addition of an external re sistor and capacitor between pin 1 and pin 8 will increase the gain to any value from 20 to 200. the inputs are ground referenced while the output automatically biases to one-half the supply voltage. the quiescent power drain is only 24mw when opera- ting from a 5v supply, making the az386 ideal for battery operation. this ic is available in soic-8 and dip-8 packages. features wide supply voltage range: 4v to 16v low quiescent current drain: 6ma voltage gains from 20 to 200 battery operation minimum external parts low power dissipation low distortion applications am-fm radio amplifier cordless phone tv sound systems portable tape player amplifier intercoms line drivers ultrasonic drivers small servo drivers power converters figure 1. package types of az386 soic-8 dip-8
low voltage audio power amplifier oct. 2006 rev. 1. 3 bcd semiconductor manufacturing limited 2 data sheet az386 figure 3. functional block diagram of az386 functional block diagram (soic-8/dip-8) pin configuration gain input + input - gnd 8 gain 7 bypass 6 v cc 5 v out 1 2 3 4 top view figure 2. pin configuration of az386 m package/p package 15k ? 15k ? bypass 150 ? 1.35k ? gain 15k ? 50k ? input - 50k ? 2 7 81 gain 6 v cc 5 v out 4 gnd 3 input +
low voltage audio power amplifier oct. 2006 rev. 1. 3 bcd semiconductor manufacturing limited 3 data sheet az386 ordering information package temperature range part number marking id packing type tin lead lead free tin lead lead free soic-8 0 to 70 o c az386m az386M-E1 386m 386M-E1 tube az386mtr az386mtr-e1 386m 386M-E1 tape & reel dip-8 0 to 70 o c az386p az386p-e1 az386p az386p-e1 tube bcd semiconductor's pb-free products, as designated with "e1" suffix in th e part number, are rohs compliant. circuit type package m: soic-8 e1: lead free blank: tin lead az386 - tr: tape and reel blank: tube p: dip-8
low voltage audio power amplifier oct. 2006 rev. 1. 3 bcd semiconductor manufacturing limited 4 data sheet az386 parameter symbol value unit power supply voltage v cc 18 v package dissipation (note 2) p d az386p 1.25 w az386m 0.73 w input voltage v in -0.4 to 0.4 v junction temperature t j 150 o c storage temperature range t stg -55 to 150 o c soldering information dip-8 soldering (10 sec.) 260 o c soic-8 (15 sec.) 215 thermal resistance ja dip-8 107 o c/w soic-8 172 absolute maximum ratings (note 1) parameter min max unit operating temperature range 0 70 o c recommended operating conditions note 1: stresses greater than those li sted under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional operatio n of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolute maximum ratings" for extended periods ma y affect device reliability. note 2: for operation in ambient temperatures (t a ) above 25 o c, the device must be derated based on a 150 o c maximum junction temperature and 1) a thermal resistance of 107 o c/w junction to ambient for the dual-in-line package and 2) a ther mal resistance of 172 o c/w for the small outline package.
oct. 2006 rev. 1. 3 bcd semiconductor manufacturing limited 5 low voltage audio power amplifier data sheet az386 electrical characteristics (note 3) parameter symbol test conditions min typ max unit supply voltage v cc 416v quiescent current i q v cc =6v, v in =0 68ma output power p out v cc =6v, r l =8 ? , thd=10% 250 300 mw v cc =9v, r l =8 ? , thd=10% 500 800 mw v cc =16v, r l =32 ? , thd=10% 700 1000 mw voltage gain g v v cc =6v, f=1khz 10 f from pin 1 to 8 26 db 45 db bandwidth bw v cc =6v, pins 1 and 8 open 500 khz total harmonic distortion thd v cc =6v, r l =8 ? , p out= 125mw f=1khz, pins 1 and 8 open 0.27 % power supply rejection ratio psrr v cc =6v, f=1khz, c bypass =10 f, pins 1 and 8 open, referred to output 45 db input resistance r in 70 k ? input bias current i bias v cc =6v, pins 2 and 3 open 10 na note 3: all voltages are measured with respect to the ground pin, unless otherwise specified. operating conditions: t a =25 o c unless otherwise specified.
low voltage audio power amplifier oct. 2006 rev. 1. 3 bcd semiconductor manufacturing limited 6 data sheet az386 figure 4. quiescent supply current vs. supply voltage typical performance characteristics figure 5. peak-to-peak output voltage swing vs. supply voltage figure 7. distortion vs. frequency figure 6. voltage gain vs. frequency figure 8. distortion vs. output power 1 10 100 1,000 0 1 2 3 4 5 6 7 8 9 10 thd (%) power out (mw) az386 v cc =6v r l =8 ? f=1khz 10 100 1k 10k 0.0 0.2 0.4 0.6 0.8 1.0 1.2 thd (%) frequency (hz) az386 v cc =6v r l =8 ? p out =125mw c1,8=0 100 1k 10k 100k 1m 0 10 20 30 40 50 60 voltage gain (db) frequency (hz) az386 c1,8=0 az386 c1,8=10u 4 6 8 1012141618 1 2 3 4 5 6 7 8 supply current (ma) supply voltage (v) az386 figure 9. device dissi pation vs. output power (4 ? load) 0.0 0.1 0.2 0.3 0.4 0.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 device dissipation (w) output power (w) az386 v cc =12v az386 v cc =9v az386 v cc =6v r l =4 ? 4 5 6 7 8 9 10 11 12 13 14 15 16 0 2 4 6 8 10 12 14 16 output voltage (v) (peak to peak) supply voltage (v) az386 r l =4 ? az386 r l =8 ? az386 r l =16 ? az386 r l =32 ?
oct. 2006 rev. 1. 3 bcd semiconductor manufacturing limited 7 low voltage audio power amplifier data sheet az386 typical performance ch aracteristics (continued) figure 10. device dissi pation vs. output power (8 ? load) 0.00.20.40.60.81.01.21.41.61.82.0 0.0 0.2 0.4 0.6 0.8 1.0 device dissipation (w) output power (w) az386 v cc =16v az386 v cc =12v az386 v cc =9v az386 v cc =6v r l =16 ? figure 11. device dissi pation vs. output power (16 ? load) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 device dissipation (w) output power (w) az386 v cc =16v az386 v cc =12v az386 v cc =9v az386 v cc =6v r l =8 ? typical applications figure 12. amplifier with gain=20 2 - + az386 v cc 10k ? 3 4 250 f 0.05 f 6 1 8 5 7 v in + 10 ? figure 13. amplifier with gain=200 2 - + az386 v cc 10k ? 3 4 250 f 0.05 f 6 1 8 5 7 10 f v in bypass 10 ? + +
low voltage audio power amplifier oct. 2006 rev. 1. 3 bcd semiconductor manufacturing limited 8 data sheet az386 typical applicat ions (continued) figure 14. amplifier with gain=50 figure 15. low distortion power wienbridge oscillator figure 16. amplifier with bass boost figure 17. square wave oscillator 2 - + az386 v cc 10k ? 3 4 250 f 0.05 f 10 ? 6 1 8 5 7 10 f 1.2k ? v in bypass + + 2 - + az386 v cc 4.7k ? 3 50 f 0.01 f 47k ? 6 1 8 5 7 10 f 0.01 f 0.05 f 10 ? r l 390 ? v o bypass cf-s-2158 eldema 3v - 15ma + + 2 - + az386 v cc 10k ? 3 4 250 f 0.05 f 10 ? 6 8 1 5 7 r l 10k ? 0.033 f v o + v in 2 3 50 f 6 1 8 4 7 5 az386 1k ? 10k ? r l 30k ? v cc 0.1 f f = 1khz v o - + +
oct. 2006 rev. 1. 3 bcd semiconductor manufacturing limited 9 low voltage audio power amplifier data sheet az386 mechanical dimensions soic-8 unit: mm(inch) 0 8 1 5 r 0 . 1 5 0 ( 0 . 0 0 6 ) r0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 7 7 2 0 : 1 d 1.270(0.050) typ 0.190(0.007) 0.250(0.010) 8 d 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 8 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201)
low voltage audio power amplifier oct. 2006 rev. 1. 3 bcd semiconductor manufacturing limited 10 data sheet az386 dip-8 mechanical dimens ions (continued) unit: mm(inch) 4 6 r0.750(0.030) 0.254(0.010)typ 0.130(0.005)min 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 7.620(0.300)typ 4 6 5 0.700(0.028) 9.000(0.354) 9.400(0.370) 3.710(0.146) 4.310(0.170) 3.000(0.118) 3.600(0.142) 0.360(0.014) 0.560(0.022) 2.540(0.100) typ 6.200(0.244) 6.600(0.260) 3.200(0.126) 3.600(0.142) 0.510(0.020)min 3.000(0.118) depth 0.100(0.004) 0.200(0.008) 1.524(0.060) typ
important notice bcd semiconductor manufacturing limite d reserves the right to make changes without further notice to any products or specifi- cations herein. bcd semiconductor manufacturing limite d does not assume any re sponsibility for use of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951, fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808, fax: +886-2-2656 2806 usa office bcd semiconductor corporation 3170 de la cruz blvd., suite 105, santa clara, ca 95054-2411, u.s.a - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com

▲Up To Search▲

Price & Availability of 386M-E1

	To Download 386M-E1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .